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GT25Q102 - Insulated Gate Bipolar Transistor Silicon N Channel IGBT High Power Switching Applications N CHANNEL IBGT (HIGH POWER SWITCHING APPLICATIONS)

GT25Q102_1246381.PDF Datasheet

 
Part No. GT25Q102
Description Insulated Gate Bipolar Transistor Silicon N Channel IGBT High Power Switching Applications
N CHANNEL IBGT (HIGH POWER SWITCHING APPLICATIONS)

File Size 150.88K  /  6 Page  

Maker

TOSHIBA[Toshiba Semiconductor]



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Part: GT25Q101
Maker: TOSHIBA(东芝)
Pack: TO-3PL
Stock: 164
Unit price for :
    50: $9.69
  100: $9.21
1000: $8.72

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